Cheongju-si, South Korea

Seong Hyun Kim

This inventor holds 1 USPTO granted patent. Top assignee: Sk Keyfoundry Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seong Hyun Kim. Retrieved from https://idiyas.com/inventor/seong-hyun-kim-9tp6br62

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Seong Hyun Kim: Innovator in Semiconductor Technology

Introduction

Seong Hyun Kim is a prominent inventor based in Cheongju-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Seong Hyun Kim holds a patent for a semiconductor device and method having deep trench isolation. This manufacturing method involves several intricate steps, including the formation of gate structures on a substrate, the creation of a deep trench isolation hard mask, and the deposition of various oxide layers. His work in this area has advanced the efficiency and effectiveness of semiconductor manufacturing processes. He has 1 patent to his name.

Career Highlights

Seong Hyun Kim is currently employed at SK Keyfoundry Inc., where he continues to push the boundaries of semiconductor technology. His expertise and innovative approach have made him a valuable asset to the company.

Collaborations

Throughout his career, Seong Hyun Kim has collaborated with notable colleagues, including Kwang Il Kim and Yang Beom Kang. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Seong Hyun Kim's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at SK Keyfoundry Inc. highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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