The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

May. 01, 2023
Applicant:

SK Keyfoundry Inc., Cheongju-si, KR;

Inventor:

Minkuck Cho, Cheongju-si, KR;

Assignee:

SK keyfoundry Inc., Cheongju-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6892 (2025.01); H10D 30/0411 (2025.01); H10D 30/683 (2025.01); H10D 64/035 (2025.01);
Abstract

A semiconductor device includes a first source region and a drain region disposed on a substrate; a first gate stack comprising a first floating gate and a first control gate, and disposed between the first source region and the drain region; a first select gate disposed on one sidewall of the first gate stack; a first spacer disposed on a lower sidewall of the first select gate, and disposed adjacent to the first source region; a second spacer disposed on an upper sidewall of the first select gate; a first control gate silicide layer disposed on the first control gate; and a first select gate silicide layer disposed on the first select gate, and disposed between the first spacer and the second spacer.


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