The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Nov. 30, 2023
Applicant:

SK Keyfoundry Inc., Cheongju-si, KR;

Inventors:

Dal Jin Lee, Cheongju-si, KR;

Yang Beom Kang, Cheongju-si, KR;

Kang Sup Shin, Cheongju-si, KR;

Assignee:

SK keyfoundry Inc., Cheongju-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/24 (2026.01); H10P 50/26 (2026.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10P 50/242 (2026.01); H10P 50/266 (2026.01); H10P 50/283 (2026.01);
Abstract

A method for manufacturing a semiconductor die includes forming a front side of a semiconductor wafer; etching a surface of the semiconductor wafer to a predetermined depth to form a first aperture in the front side of the semiconductor wafer; forming a protective layer on the front side of the semiconductor wafer and performing a first turning-over of the semiconductor wafer to a back side of the semiconductor wafer; exposing a bottom of the first aperture to form a second aperture in the back side of the semiconductor wafer; and performing a second turning-over of the semiconductor wafer to the front side of the semiconductor wafer and removing the protective layer.


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Lee, Dal. (2026). Method for manufacturing semiconductor die (U.S. Patent No. 12787670). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787670

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