The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Mar. 08, 2019
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Hee Hwan Ji, Cheongju-si, KR;
Tae Ho Kim, Cheongju-si, KR;
Assignee:
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H03F 3/183 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H02M 1/42 (2007.01); H02M 3/28 (2006.01); H03F 1/02 (2006.01);
U.S. Cl.
CPC ...
H03F 3/183 (2013.01); H01L 21/26586 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01); H02M 1/4258 (2013.01); H02M 3/285 (2013.01); H03F 1/0205 (2013.01); H03F 1/0211 (2013.01); H03F 2200/03 (2013.01); Y02B 70/126 (2013.01);
Abstract
A semiconductor device includes a substrate comprising a WELL region, a gate electrode comprising a gate length disposed on the WELL region, and first and second drift regions which overlap with the gate electrode. The first and second draft regions may overlap with the gate electrode at an overlapping length which is a percentage of the gate length.