Hao Deng

This inventor holds 14 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International Corp.. Active years: 2014-2021.

USPTO Granted Patents = 14 (Patent Applications = 2)

% Patents Active = 100.0

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 1.2

ph-index = 4

Forward Citations = 38(Granted Patents)

Company Filing History:

13 out of 1,748

Semiconductor Manufacturing International (Shanghai) Corporation

patents

9 out of 947

Semiconductor Manufacturing International (Beijing) Corporation

patents

1 out of 78

Semiconductor Manufacturing International Corp.

patents

where one patent can have more than one assignee

Years Active: 2014-2021

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10978575 - Semiconductor structure (2021-04-13),

2. 10483371 - Semiconductor structure and fabrication method thereof (2019-11-19),

3. 10483162 - Semiconductor structure of interconnect and fabrication method thereof (2019-11-19),

4. 10453797 - Interconnection structures and fabrication methods thereof (2019-10-22),

5. 10403546 - Method to form hybrid SiGe fin (2019-09-03),

6. 10134625 - Shallow trench isolation structure and fabricating method thereof (2018-11-20),

7. 10002944 - Semiconductor structure (2018-06-19),

8. 9735251 - Semiconductor structure and fabrication method thereof (2017-08-15),

9. 9640427 - Semiconductor structure and fabrication method thereof (2017-05-02),

10. 9576897 - Semiconductor interconnect device (2017-02-21),

11. 9524865 - Semiconductor device and fabrication method thereof (2016-12-20),

12. 9406555 - Semiconductor device and fabrication method thereof (2016-08-02),

13. 9147596 - Method for forming shallow trench isolation (2015-09-29),

14. 8674450 - Semiconductor structures and fabrication method (2014-03-18),

Title: Hao Deng - Innovator in Semiconductor Technology

Introduction

Hao Deng is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His work focuses on innovative semiconductor structures and fabrication methods that enhance performance and efficiency.

Latest Patents

Hao Deng's latest patents include a semiconductor structure that features a substrate, a gate dielectric layer, a dielectric barrier layer structure, a work function layer, a gate barrier layer structure, and a gate electrode layer. This design incorporates a dielectric barrier layer structure doped with silicon, as well as a gate barrier layer structure also doped with silicon. Another notable patent is for a semiconductor structure and its fabrication method, which involves providing a substrate, forming a dielectric layer with an opening, and creating a first barrier layer doped with manganese. This method culminates in the formation of a metal interconnect located within the opening.

Career Highlights

Hao Deng has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International (Shanghai) Corporation and Semiconductor Manufacturing International (Beijing) Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Hao has collaborated with notable colleagues such as Yan Yan and Jun Yang, contributing to various projects that advance semiconductor research and development.

Conclusion

Hao Deng's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor structures and fabrication methods.