The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Nov. 16, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Hao Deng, Shanghai, CN;
Abstract
A method for forming a semiconductor structure is provided. The method includes providing a substrate; and forming an ultra-low-dielectric-constant (ULK) dielectric layer on a surface of the substrate. The method also includes etching the ultra-low-dielectric-constant dielectric layer to form a trench in the ultra-low-dielectric-constant dielectric layer; and performing an inert plasma treatment process on a side surface of the trench. Further, the method includes performing a carbonization process on the side surface of the trench; and performing a nitridation process on the side surface of the trench to form a SiCNH layer on the side surface of the trench.