The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Nov. 22, 2017
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Hao Deng, Shanghai, CN;
Abstract
A method for fabricating an interconnection structure includes providing a substrate, forming a dielectric layer on the substrate, forming a conductive structure in the dielectric layer, forming a cap layer doped with silicon on the conductive structure and the dielectric layer, and performing an annealing process on the conductive structure and the cap layer. During the annealing process, the silicon ions in the cap layer react with the material of the conductive structure and form chemical bonds. As such, the connection strength between the cap layer and the conductive structure is improved, which is conducive to suppressing electro migration in the formed interconnection structure. Therefore, the reliability of the formed interconnection structure is improved.