The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Mar. 27, 2018
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventor:
Hao Deng, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 21/288 (2006.01); C23F 17/00 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 14/06 (2006.01); H01L 23/522 (2006.01); C23C 16/04 (2006.01); C25D 7/12 (2006.01); C25D 3/38 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76846 (2013.01); C23C 14/0641 (2013.01); C23C 16/045 (2013.01); C23C 16/34 (2013.01); C23C 16/45531 (2013.01); C23F 17/00 (2013.01); C25D 7/123 (2013.01); H01L 21/2855 (2013.01); H01L 21/2885 (2013.01); H01L 21/28556 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); C25D 3/38 (2013.01); H01L 23/5329 (2013.01);
Abstract
A semiconductor structure and a fabrication method are provided. The fabrication method includes: providing a substrate; forming a dielectric layer with an opening on the substrate; forming a first barrier layer on sidewall and bottom surfaces of the opening, the first barrier layer being doped by manganese; and forming a metal interconnect on the first barrier layer, the metal interconnect being located within the opening.