The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Oct. 09, 2019
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventor:
Hao Deng, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/423 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/02271 (2013.01); H01L 21/28088 (2013.01); H01L 21/762 (2013.01); H01L 21/76829 (2013.01); H01L 21/76843 (2013.01); H01L 29/4232 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor structure is provided and includes a substrate; a gate dielectric layer on the substrate; a dielectric barrier layer structure on the gate dielectric layer; a work function layer on the dielectric barrier layer structure; a gate barrier layer structure on the work function layer; and a gate electrode layer on the gate barrier layer structure. The dielectric barrier layer structure is doped with silicon and the gate barrier layer structure is doped with silicon.