Mesa, AZ, United States of America

Gordon M Grivna

This inventor holds 220 USPTO granted patents and 16 published patent applications and 7 EPO patents, primarily in Semiconductor Devices (CPC class H01L21-78). Top assignees: Semiconductor Components Industries, LLC, Plasma-Therm, Inc., Motorola Corporation. Active years: 1992-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gordon M Grivna. Retrieved from https://idiyas.com/inventor/gordon-m-grivna

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 220 

% Patents Active = 96.8

 

Average Co-Inventor Count = 2.0

ph-index = 22

Forward Citations = 1,677(Granted Patents)

Forward Citations (Not Self Cited) = 1,208(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Meza, AZ (US) (2010)
  • Tempe, AZ (US) (2012)
  • Mesa, AZ (US) (1992 - 2024)

Company Filing History:


Years Active: 1992-2025

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Areas of Expertise:
Plasma Dicing
Semiconductor Wafer
Fan-Out Packaging
Trench-Gate IGBTs
Ultra-Thin Die
High Electron Mobility Transistor
Source-Down Devices
Residual Contamination
Polymer Support Layer
Insulating Structure
Conductive Member
Back Layer Separation
220 patents (USPTO):Explore Patents

Title: Gordon M Grivna: Innovating Semiconductor Technologies in Mesa, AZ

Introduction:

Gordon M Grivna, a resident of Mesa, AZ, stands as a prominent inventor and contributor to the field of semiconductor technologies. With an impressive total of 201 patents to his name, Grivna has played a pivotal role in shaping the industry. This article explores his latest patents, career highlights, and notable collaborations.

Latest Patents:

Grivna's recent patents reflect his expertise in semiconductor device assemblies and methods for manufacturing trench-gate insulated-gate bipolar transistors (IGBTs). One of his latest inventions is the "Monolithic semiconductor device assemblies," where he introduces an isolation trench to electrically separate different portions of a semiconductor substrate. This innovation enhances the functionality and performance of semiconductor devices.

Another noteworthy creation by Grivna is the "Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs)," which focuses on forming an IGBT device with an active segment within one mesa and an inactive segment within another. This technique improves the efficiency and reliability of IGBT devices.

Career Highlights:

Grivna's career encompasses significant contributions to various companies in the semiconductor industry. He has made notable contributions while working at Semiconductor Components Industries, LLC, a well-known company in the field. His innovative ideas and expertise have helped advance the development of cutting-edge semiconductor technologies.

Collaborations:

Throughout his career, Grivna has had the opportunity to collaborate with other talented individuals. Notably, he has worked with professionals such as Gary Horst Loechelt and Linnell Martinez. These collaborations have led to fruitful partnerships and the exchange of innovative ideas, further propelling advancements within the industry.

Conclusion:

Gordon M Grivna's impressive portfolio of patents reflects his key role in pushing the boundaries of semiconductor technologies. His contributions to the field have not only expanded the scope of research and development in the semiconductor industry, but also helped to improve the efficiency and performance of various devices.

By pushing the limits of innovation, Grivna has established himself as a leading figure within the industry. His collaboration with esteemed professionals and work within renowned organizations further cements his influence in the field of semiconductor technologies. Gordon M Grivna's dedication to advancing semiconductor devices continues to shape the industry's future, making him a true visionary in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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