The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Oct. 01, 2020
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Peter Moens, Erwetegem, BE;

Gordon M. Grivna, Mesa, AZ (US);

Yusheng Lin, Phoenix, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 25/07 (2006.01); H01L 29/20 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76224 (2013.01); H01L 25/071 (2013.01); H01L 29/2003 (2013.01);
Abstract

In a general aspect, a semiconductor device assembly can include a semiconductor substrate that excludes a buried oxide layer. The semiconductor device assembly can also include a first semiconductor device stack disposed on a first portion of the semiconductor substrate, and a second semiconductor device stack disposed on a second portion of the semiconductor substrate. The semiconductor device assembly can further include an isolation trench having a dielectric material disposed therein, the isolation trench being disposed between the first portion of the semiconductor substrate and the second portion of the semiconductor substrate. The isolation trench can electrically isolate the first portion of the semiconductor substrate from the second portion of the semiconductor substrate.


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