The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Jul. 17, 2020
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Meng-Chia Lee, Chubbuck, ID (US);
Ralph N. Wall, Pocatello, ID (US);
Mingjiao Liu, Gilbert, AZ (US);
Shamsul Arefin Khan, Chandler, AZ (US);
Gordon M. Grivna, Mesa, AZ (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
In a general aspect, method of producing an insulated-gate bipolar transistor (IGBT) device can include forming a termination structure in an inactive region. The inactive region at least partial surround an active region. The method can also include forming a trench extending along a longitudinal axis in the active region. A first mesa can define a first sidewall of the trench, and a second mesa can define a second sidewall of the trench. The first mesa and the second mesa can be parallel with the trench. The method can further include forming, in at least a portion of the first mesa, an active segment of the IGBT device, and, forming, in at least a portion of the second mesa, an inactive segment of the IGBT device.