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For the Inventor, By the Inventor

Pocatello, ID, United States of America

Ralph N Wall

This inventor holds 12 USPTO granted patents. Top assignee: Semiconductor Components Industries, LLC. Active years: 2015-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ralph N Wall. Retrieved from https://idiyas.com/inventor/ralph-n-wall-so6rr8fj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12

% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:

goldMedal12 out of 3,725 
 
Semiconductor Components Industries, LLC
 patents

Years Active: 2015-2025

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12 patents (USPTO):Explore Patents
1. 12284834 - Semiconductor devices and methods of manufacturing semiconductor devices (2025-04-21),
2. 12166068 - Electronic device including a semiconductor layer within a trench and a semiconductor layer and a process of forming the same (2024-12-10),
3. 12087760 - Semiconductor devices and methods of manufacturing semiconductor devices (2024-09-10),
4. 11670706 - Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs) (2023-06-06),
5. 11056581 - Trench-gate insulated-gate bipolar transistors (2021-07-06),
6. 10727326 - Trench-gate insulated-gate bipolar transistors (IGBTs) (2020-07-28),
7. 10546948 - Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same (2020-01-28),
8. 10388726 - Accumulation enhanced insulated gate bipolar transistor (AEGT) and methods of use thereof (2019-08-20),
9. 10128330 - Semiconductor device with a buried junction layer having an interspersed pattern of doped and counter-doped materials (2018-11-13),
10. 9564424 - ESD device and structure therefor (2017-02-07),
11. 9337178 - Method of forming an ESD device and structure therefor (2016-05-10),
12. 9111758 - Semiconductor component and method of manufacture (2015-08-18),

Title: The Legacy of Ralph N Wall: Innovator from Pocatello

Introduction: Ralph N Wall, a distinguished inventor hailing from Pocatello, ID (US), has made significant contributions to the field of innovation with his groundbreaking ideas and inventions.

Latest Patents: Ralph N Wall's latest patents showcase his ongoing commitment to pushing the boundaries of technology and creativity, with a focus on improving everyday life through his inventions.

Career Highlights: Throughout his illustrious career, Ralph N Wall has been recognized for his innovative spirit and dedication to creating solutions that make a difference. His work has not only earned him numerous patents but has also inspired a new generation of inventors.

Collaborations: Ralph N Wall has collaborated with leading experts in various industries to bring his inventions to life. His ability to work effectively in teams and leverage the expertise of others has been instrumental in the success of his projects.

Conclusion: Ralph N Wall's impact on the world of innovation is undeniable, and his legacy as an inventor from Pocatello will continue to inspire future generations to think outside the box and pursue their creative passions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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