The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jan. 31, 2018
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Meng-Chia Lee, Chubbuck, ID (US);
Ralph N. Wall, Pocatello, ID (US);
Mingjiao Liu, Gilbert, AZ (US);
Shamsul Arefin Khan, Chandler, AZ (US);
Gordon M. Grivna, Mesa, AZ (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT can also include a first mesa defining a first sidewall of the trench and in parallel with the trench and a second mesa defining a second sidewall of the trench and in parallel with the trench. At least a portion of the first mesa can include an active segment of the IGBT device, and at least a portion of the second mesa can include an inactive segment of the IGBT device.