Gill Yong Lee

This inventor holds 26 USPTO granted patents and 8 published patent applications, primarily in 3D Memory Technology. Top assignees: Applied Materials, Inc., Micro Materials Inc.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gill Yong Lee. Retrieved from https://idiyas.com/inventor/gill-yong-lee-ry2lr4ky

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 (Patent Applications = 8)

% Patents Active = 96.2

Average Co-Inventor Count = 5.0

ph-index = 5

Forward Citations = 60(Granted Patents)

Location History:

Santa Clara, CA (US) (2017 - 2023)
San Jose, CA (US) (2020 - 2023)

Company Filing History:

25 out of 14,482

Applied Materials, Inc.

Years Active: 2017-2026

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Areas of Expertise:

3D Memory

DRAM Structures

NAND Fabrication

Word Line Contact

Heteroepitaxy Stacks

Charge Trap Cells

MOSFET Design

Dynamic Random Access Memory

Vertical Bit-Line

Bit Line Resistance

Gate Induced Drain Leakage

Substrate Fabrication

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12713596 - POLY-SILICON BASED WORD LINE FOR 3D MEMORY (2026-08-18),

2. 12550317 - Direct word line contact and methods of manufacture for 3D memory (2026-02-10),

3. 12543521 - Methods of forming memory device with reduced resistivity (2026-02-03),

4. 12526971 - Reduced strain Si/SiGe heteroepitaxy stacks for 3D DRAM (2026-01-13),

5. 12482749 - L-type wordline connection structure for three-dimensional memory (2025-11-25),

6. 12477723 - Three dimensional memory device and method of fabrication (2025-11-18),

7. 12464716 - NAND cell structure with charge trap cut (2025-11-04),

8. 12408370 - Structure and fabrication method of high voltage MOSFET with a vertical drift region (2025-09-02),

9. 12148475 - Selection gate separation for 3D NAND (2024-11-19),

10. 11818877 - Three-dimensional dynamic random access memory (DRAM) and methods of forming the same (2023-11-14),

11. 11765889 - Method to scale dram with self aligned bit line process (2023-09-19),

12. 11763856 - 3-D DRAM structure with vertical bit-line (2023-09-19),

13. 11749315 - 3D DRAM structure with high mobility channel (2023-09-05),

14. 11621266 - Method of testing a gap fill for DRAM (2023-04-04),

15. 11552082 - Reducing gate induced drain leakage in DRAM wordline (2023-01-10),

Sure, I can help with that. Here is the article about inventor Gill Yong Lee:

Title: Inspiring Innovation: The Legacy of Gill Yong Lee

Introduction:

Gill Yong Lee, a pioneering inventor based in San Jose, CA, is renowned for his passion for innovation and his unwavering commitment to excellence. With a remarkable portfolio of 17 patents, Lee continues to inspire the next generation of inventors and shape the future of technology.

Latest Patents:

Among Lee's latest patents is the groundbreaking "Three-dimensional dynamic random access memory (DRAM) and methods of forming the same." This invention revolutionizes the field of memory devices with its innovative approach to forming a film stack on a substrate. Additionally, Lee's "Method to scale DRAM with self-aligned bit line process" showcases his expertise in memory device manufacturing, specifically focusing on self-aligned bit line processes for enhanced performance.

Career Highlights:

Lee is a key figure at Micro Materials Inc., where his innovative spirit drives technological advancements. His dedication to pushing the boundaries of memory device technology has solidified his reputation as a leader in the industry. Lee's contributions have not only enhanced the company's product offerings but have also set new standards for innovation in the field.

Collaborations:

Throughout his career, Lee has collaborated closely with esteemed colleagues such as Sung-Kwan Kang and Chang Seok Kang. Together, they have tackled complex technological challenges and spearheaded groundbreaking projects that have garnered recognition across the industry. Lee's collaborative approach underscores his belief in the power of teamwork to achieve innovative breakthroughs.

Conclusion:

In conclusion, Gill Yong Lee's remarkable journey as an inventor exemplifies the transformative impact of passion, dedication, and innovation. His pioneering work in the field of memory devices continues to shape the landscape of technology, inspiring others to push boundaries and strive for excellence. Lee's legacy serves as a beacon for aspiring inventors, paving the way for a future defined by creativity and ingenuity.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

8 patents pending: