The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jul. 08, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

John Byron Tolle, Gilbert, AZ (US);

Tomohiko Kitajima, San Jose, CA (US);

Thomas John Kirschenheiter, Tempe, AZ (US);

Patricia M. Liu, Saratoga, CA (US);

Zuoming Zhu, Santa Clara, CA (US);

Joe Margetis, Gilbert, AZ (US);

Fredrick David Fishburn, Aptos, CA (US);

Abdul Wahab Mohammed, Santa Clara, CA (US);

Gill Yong Lee, San Jose, CA (US);

Assignee:

Applied Materials Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/01 (2023.02);
Abstract

Three-dimensional dynamic random-access memory (3D DRAM) structures and methods of formation of same are provided herein. In some embodiments, a 3D DRAM stack can include alternating silicon (Si) layers and silicon germanium (SiGe) layers. Each of the Si layers may have a height greater than a height of each of the SiGe layers. Methods and systems for formation of such structures are further provided.


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