The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Apr. 05, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Changseok Kang, San Jose, CA (US);

Tomohiko Kitajima, San Jose, CA (US);

Gill Yong Lee, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/00 (2025.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/0281 (2025.01); H10D 62/393 (2025.01);
Abstract

Embodiments of the present disclosure include a transistor with a vertical drift region and methods for forming the transistor. The transistor may include a well region of a first conductivity type, a gate region disposed above the well region, and a drift region of a second conductivity type, different from the first conductivity type. The drift region may have a lateral portion disposed above a portion of the well region and laterally adjacent to a semiconductor channel in the well region. The drift region may also have a vertical portion extending vertically from the lateral portion of the drift region.


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