The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Nov. 14, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Chang Seok Kang, Santa Clara, CA (US);
Tomohiko Kitajima, San Jose, CA (US);
Gill Yong Lee, San Jose, CA (US);
Balasubramanian Pranatharthiharan, San Jose, CA (US);
Mukund Srinivasan, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Described is a memory device including a plurality of memory cells formed around a memory hole extending through a memory stack on a substrate. Each of the plurality of memory cells comprises a discrete blocking oxide layer, a charge trap layer, and a tunnel oxide layer. The blocking oxide layer is discrete between each of the plurality of memory cells. The tunnel oxide layer is continuous between each of the plurality of memory cells, and the charge trap layer is discrete between each of the plurality of memory cells. The charge trap layer has a first thickness on a top portion and a second thickness on a center portion, the first thickness different than the second thickness.