Balasubramanian Pranatharthiharan

Title: Balasubramanian Pranatharthiharan: Innovator in Memory Device Technology

Introduction

Balasubramanian Pranatharthiharan is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of memory devices, particularly with his innovative designs that enhance data storage technology.

Latest Patents

Pranatharthiharan holds a patent for a NAND cell structure with a charge trap cut. This patent describes a memory device that includes a plurality of memory cells formed around a memory hole extending through a memory stack on a substrate. Each memory cell comprises a discrete blocking oxide layer, a charge trap layer, and a tunnel oxide layer. The blocking oxide layer is discrete between each memory cell, while the tunnel oxide layer is continuous. The charge trap layer has varying thicknesses, with the first thickness on the top portion being different from the second thickness on the center portion.

Career Highlights

He is currently employed at Applied Materials, Inc., where he continues to work on advancing memory technology. His expertise in semiconductor technology has positioned him as a key player in the industry.

Collaborations

Pranatharthiharan collaborates with talented professionals, including his coworker Tomohiko Kitajima, to drive innovation in memory device technology.

Conclusion

Balasubramanian Pranatharthiharan's contributions to memory device technology through his patent and work at Applied Materials, Inc. highlight his role as an influential inventor in the field.