The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Mar. 28, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Chang Seok Kang, Santa Clara, CA (US);
Tomohiko Kitajima, San Jose, CA (US);
Gill Yong Lee, San Jose, CA (US);
Qian Fu, Pleasanton, CA (US);
Sung-Kwan Kang, Santa Clara, CA (US);
Takehito Koshizawa, San Jose, CA (US);
Fredrick Fishburn, Aptos, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Described is a memory string including at least one select gate for drain (SGD) transistor and at least one memory transistor in a vertical hole extending through a memory stack on a substrate. The memory stack comprises alternating word lines and dielectric material. There is at least one select-gate-for-drain (SGD) transistor in a first vertical hole extending through the memory stack, the select-gate-for-drain (SGD) transistor comprising a first gate material. At least one memory transistor is in a second vertical hole extending through the memory stack, the at least one memory transistor comprising a second gate material different from the first gate material.