IDiyas

For the Inventor, By the Inventor

San Jose, CA, United States of America

Sung-Kwan Kang

USPTO Granted Patents = 21 

Average Co-Inventor Count = 5.3

ph-index = 4

Forward Citations = 33(Granted Patents)


Location History:

  • San Jose, CA (US) (2020 - 2023)
  • Santa Clara, CA (US) (2023)

Company Filing History:

goldMedal21 out of 13,684 
 
Applied Materials, Inc.
 patents

Years Active: 2020-2025

Loading Chart...
21 patents (USPTO):Explore Patents
1. 12482749 - L-type wordline connection structure for three-dimensional memory (2025-11-25),
2. 12477723 - Three dimensional memory device and method of fabrication (2025-11-18),
3. 12387978 - Ru liner above a barrier layer (2025-08-12),
4. 12148475 - Selection gate separation for 3D NAND (2024-11-19),
5. 11818877 - Three-dimensional dynamic random access memory (DRAM) and methods of forming the same (2023-11-14),
6. 11765889 - Method to scale dram with self aligned bit line process (2023-09-19),
7. 11763856 - 3-D DRAM structure with vertical bit-line (2023-09-19),
8. 11749315 - 3D DRAM structure with high mobility channel (2023-09-05),
9. 11621266 - Method of testing a gap fill for DRAM (2023-04-04),
10. 11587930 - 3-D DRAM structures and methods of manufacture (2023-02-21),
11. 11587796 - 3D-NAND memory cell structure (2023-02-21),
12. 11552082 - Reducing gate induced drain leakage in DRAM wordline (2023-01-10),
13. 11545504 - Methods and apparatus for three dimensional NAND structure fabrication (2023-01-03),
14. 11430801 - Methods and apparatus for three dimensional NAND structure fabrication (2022-08-30),
15. 11295786 - 3D dram structure with high mobility channel (2022-04-05),

Title: The Innovative Mind of Sung-Kwan Kang

Introduction

Sung-Kwan Kang is a prolific inventor based in San Jose, CA, recognized for his significant contributions to the field of memory technology. With an impressive portfolio of 18 patents, his work has been instrumental in advancing modern data storage solutions.

Latest Patents

Some of Sung-Kwan Kang's latest patents include advancements in three-dimensional NAND and dynamic random access memory (DRAM). One notable patent focuses on a memory string that incorporates at least one select gate for drain (SGD) transistor and at least one memory transistor within a vertical hole extending through a memory stack. This design involves alternating word lines and dielectric materials to enhance the efficiency of memory storage.

Another significant invention pertains to three-dimensional DRAM systems, detailing methods for creating a film stack on a substrate composed of multiple unit stacks. This process involves forming various openings and recesses to establish a gate structure and capacitor, ultimately optimizing memory capabilities.

Career Highlights

Sung-Kwan works at Applied Materials, Inc., a leading company in the development of advanced materials used in semiconductor manufacturing. His role at this innovative firm allows him to pursue cutting-edge research and development efforts that continue to shape the future of technology.

Collaborations

In his career, Sung-Kwan has had the opportunity to collaborate with renowned professionals in the industry, such as Gill Yong Lee and Chang Seok Kang. These partnerships have fostered an environment of creativity and exchange of ideas, further enhancing the impact of their collective work.

Conclusion

With his extensive contributions to memory technology and a commitment to innovation, Sung-Kwan Kang remains a key figure in the realm of semiconductor invention. His patents not only exemplify his expertise but also pave the way for future advancements in data storage, demonstrating the vital role of inventors in evolving technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…