The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Mar. 16, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Fredrick Fishburn, Aptos, CA (US);
Sung-Kwan Kang, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Provided is a DRAM device having a support layer to hold the bWL features before being filled with the electrode metal. The support layer keeps the structure supported from the top surface but does not prevent the gap fill. A temporary gap-fill material is first deposited in the bWL gaps and then recessed to expose the top edges. A support layer material is then deposited on the structure by plasma enhanced chemical vapor deposition (PECVD). The device is then patterned orthogonal and with pitch greater than the bWL pitch. The temporary gap-fill material is then removed, forming support beams comprising the support material. A metal can then be deposited to fill the bWL gaps under the support beams.