München, Germany

Gerrit Lange



Average Co-Inventor Count = 5.0

ph-index = 6

Forward Citations = 93(Granted Patents)


Location History:

  • Munchen, DE (2000)
  • Munich, DE (2000)
  • München, DE (2001 - 2003)

Company Filing History:


Years Active: 2000-2003

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11 patents (USPTO):

Title: Gerrit Lange: Innovator in Semiconductor Technology

Introduction

Gerrit Lange is a prominent inventor based in München, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on innovative methods and materials that enhance the performance and efficiency of electronic components.

Latest Patents

Among his latest patents is a method for producing a perforated work piece. This invention involves a substrate made from silicon, which features a first region with through pores and a second region with non-traversing pores. The production process utilizes electrochemical etching, with a mask layer structured photolithographically on the substrate's rear. Another notable patent is for a DRAM memory capacitor that incorporates a three-layer dielectric made of BaSrTiO (BST). This design allows for the creation of a potential trough where electrons can be permanently trapped, enhancing the capacitor's functionality.

Career Highlights

Gerrit Lange has worked with leading companies in the technology sector, including Siemens Aktiengesellschaft and Infineon Technologies AG. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in semiconductor technology.

Collaborations

Throughout his career, Lange has collaborated with notable professionals in the field, including Hans Reisinger and Hermann Wendt. These partnerships have fostered a creative environment that has led to groundbreaking inventions.

Conclusion

Gerrit Lange's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced electronic components.

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