The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Sep. 13, 1999
Applicant:
Inventors:
Gerrit Lange, München, DE;
Till Schlösser, München, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A capacitor on a semiconductor configuration is formed with a high-&egr; dielectric or a ferroelectric material. A first noble-metal-containing storage electrode has a plurality of horizontal lamellae connected to one another via a support structure. The support structure is arranged on one or preferably two opposite external flanks of the lamellae. During production, firstly (inter alia by deposition of a sequence of layers with an alternating low and high etching rate) a fin stack negative mold, in particular made from p,-polysilicon, is formed, which is then filled conformally with the electrode material.