The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Dec. 11, 2000
Hans Reisinger, Grünwald, DE;
Volker Lehmann, München, DE;
Reinhard Stengl, Stadtbergen, DE;
Hermann Wendt, Grasbrunn, DE;
Gerrit Lange, München, DE;
Harald Bachhofer, München, DE;
Martin Franosch, München, DE;
Herbert Schäfer, Höhenkirchen-Siegertsbrunn, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A storage capacitor for a DRAM has a dielectric composed of silicon nitride and has at least two electrodes disposed opposite one another across the dielectric. A material having a high tunneling barrier between the Fermi level of the material and the conduction band of the dielectric is used for the electrodes. Suitable materials for the electrodes are metals such as platinum, tungsten and iridium or silicides.