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For the Inventor, By the Inventor

Grünwald, Germany

Hans Reisinger

USPTO Granted Patents = 42

 

Average Co-Inventor Count = 3.8

ph-index = 10

Forward Citations = 648(Granted Patents)


Location History:

  • Grünwald, DE (2001 - 2006)
  • Grunwald, DE (1999 - 2008)
  • Gruenwald, DE (1993 - 2024)

Company Filing History:

goldMedal23 out of 30,045 
 
Siemens Aktiengesellschaft
 patents
silverMedal19 out of 14,724 
 
Infineon Technologies Ag
 patents

Years Active: 1993-2024

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Areas of Expertise:
Semiconductor Devices
Charge-Trapping Memory
Ferroelectric Transistors
Optical Structures
DRAM Capacitors
Integrated Circuits
Non-Volatile Memory
Memory Cell Configurations
Capacitor Fabrication
Electrical Circuits
Memory Cell Arrangements
Silicon Capacitors
42 patents (USPTO):Explore Patents
1. 11940489 - Semiconductor device having an optical device degradation sensor (2024-03-26),
2. 7402490 - Charge-trapping memory device and methods for operating and manufacturing the cell (2008-07-22),
3. 7049651 - Charge-trapping memory device including high permittivity strips (2006-05-23),
4. 6995416 - Memory device for storing electrical charge and method for fabricating the same (2006-02-07),
5. 6887437 - Reactor configuration and method for producing it (2005-05-03),
6. 6710388 - Ferroelectric transistor, use thereof in a memory cell configuration and method of producing the ferroelectric transistor (2004-03-23),
7. 6627940 - Memory cell arrangement (2003-09-30),
8. 6614575 - Optical structure and method for producing the same (2003-09-02),
9. 6614066 - Ferroelectric transistor and memory cell configuration with the ferroelectric transistor (2003-09-02),
10. 6558770 - Perforated work piece, and method for producing it (2003-05-06),
11. 6552385 - DRAM memory capacitor having three-layer dielectric, and method for its production (2003-04-22),
12. 6548846 - Storage capacitor for a DRAM (2003-04-15),
13. 6534362 - Method for fabricating a memory cell configuration (2003-03-18),
14. 6518613 - Memory cell configuration with capacitor on opposite surface of substrate and method for fabricating the same (2003-02-11),
15. 6469887 - Capacitor for semiconductor configuration and method for fabricating a dielectric layer therefor (2002-10-22),

Title: Pioneering Innovation: The Remarkable Journey of Inventor Hans Reisinger

Introduction:

Hans Reisinger, a visionary inventor hailing from Grünwald, Germany, has left an indelible mark on the landscape of technology through his tireless pursuit of innovation and excellence. With a staggering 42 patents to his name, Reisinger stands as a beacon of inspiration for aspiring inventors and technologists worldwide.

Latest Patents:

Among his latest patents is the groundbreaking "Semiconductor Device Having an Optical Device Degradation Sensor," revolutionizing the monitoring and characterization of semiconductor devices. Additionally, Reisinger's "Charge-Trapping Memory Device" is spearheading advancements in memory device manufacturing and operations.

Career Highlights:

Throughout his illustrious career, Reisinger has lent his expertise to renowned companies such as Siemens Aktiengesellschaft and Infineon Technologies AG, where he played a pivotal role in driving technological innovation and progress. His contributions have not only shaped the future of these organizations but have also influenced the broader technological landscape.

Collaborations:

Collaborating closely with esteemed colleagues like Reinhard J Stengl and Hermann Wendt, Reisinger has fostered a culture of innovation and collaboration, propelling forward groundbreaking projects and inventions. Together, they have set new benchmarks in technological advancement, inspiring future generations of inventors.

Conclusion:

Inventor Hans Reisinger's unwavering passion for innovation and relentless pursuit of excellence have not only earned him a stellar reputation but have also cemented his legacy as a true visionary in the realm of technology. His groundbreaking patents and significant contributions to the field have undoubtedly shaped the future of technology, leaving a lasting impact for generations to come.

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