The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Jan. 08, 2001
Applicant:
Inventors:
Gerhard Beitel, München, DE;
Martin Franosch, München, DE;
Thomas Peter Haneder, München, DE;
Gerrit Lange, München, DE;
Hans Reisinger, Grünwald, DE;
Herbert Schäfer, Höhenkirchen-Siegertsbrunn, DE;
Stephan Schlamminger, Zürich, CH;
Hermann Wendt, Grasbrunn, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ;
U.S. Cl.
CPC ...
H01L 2/7108 ;
Abstract
A DRAM capacitor is described that contains a BaSrTiO (BST) dielectric. The dielectric has a three-layer structure enabling the formation of a potential trough in which electrons can be permanently trapped.