The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Nov. 08, 2000
Volker Lehmann, München, DE;
Hans Reisinger, Grünwald, DE;
Hermann Wendt, Grasbrunn, DE;
Reinhard Stengel, Stadtbergen, DE;
Gerrit Lange, München, DE;
Stefan Ottow, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A substrate made from silicon has a first region and a second region. Through pores are formed in the first region. Pores that do not traverse the substrate are provided in the second region. The production of the work piece is performed with the aid of electrochemical etching of the pores. The entire surface of the substrate is covered with a mask layer that is structured photolithographically on the rear of the substrate. The bottoms of the pores in the second region are etched clear, preferably using KOH.