The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Dec. 03, 2001
Applicant:
Inventor:
Hans Reisinger, Grünwald, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method for fabricating a memory cell configuration, which includes the steps of etching isolation trenches into a semiconductor substrate and thereby forming webs between the isolation trenches and producing bit lines after channel regions have been produced. It furthermore includes performing an etching step which results in the isolation trenches penetrating more deeply into the semiconductor substrate.