The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2000

Filed:

May. 14, 1999
Applicant:
Inventors:

Gerrit Lange, Munchen, DE;

Martin Franosch, Munchen, DE;

Volker Lehmann, Munchen, DE;

Hans Reisinger, Grunwald, DE;

Herbert Schafer, Hoohenkirchen-Sieg.Brunn, DE;

Reinhard Stengl, Stadtbergen, DE;

Hermann Wendt, Grasbrunn, DE;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438254 ; 438396 ;
Abstract

On a carrier a layer sequence is applied which contains alternatingly layers made of a first conducting material and a second material in which both materials are different from a carrier material. An opening is made in the layer sequence, which is filled with a conducting material so that a central supporting structure is produced. Then the layer sequence is structured corresponding to the dimensions of a capacitor and the layers made of the second material are removed selectively, so that a first capacitor electrode is formed. The layer sequence may have especially p.sup.+ -/p.sup.- silicon layers or silicon/germanium layers. An etch-stop layer can also be incorporated as the lowest or second-lowest layer.


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