Hoehenkirchen-Siegertsbrunn, Germany

Herbert Schäfer

This inventor holds 26 USPTO granted patents and 1 published patent application and 5 EPO patents, primarily in Bipolar Transistors. Top assignees: Infineon Technologies Ag, Siemens Aktiengesellschaft, Infineon Technologies Austria Ag. Active years: 1999-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Herbert Schäfer. Retrieved from https://idiyas.com/inventor/herbert-schafer

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 26 

% Patents Active = 65.4

 

Average Co-Inventor Count = 4.5

ph-index = 9

Forward Citations = 183(Granted Patents)


Location History:

  • Hohenkirchen-Sieg. Brunn, DE (2000)
  • Hoohenkirchen-Sieg.Brunn, DE (2000)
  • Hohenkirchen-Sieg Brunn, DE (2000)
  • Höhenkirchen-Sieg Brunn, DE (2001)
  • Höhenkirchen, DE (2005)
  • Hohenkirchen-Siegertsbrunn, DE (1999 - 2008)
  • Höhenkirchen-Siegertsb, DE (2009)
  • Höhenkirchen-Siegertsbrunn, DE (2005 - 2012)
  • Hoehenkirchen-Siegertsbrunn, DE (2008 - 2012)

Company Filing History:


Years Active: 1999-2012

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Areas of Expertise:
Bipolar Transistor
Transistor Structure
Silicon Semiconductor
Capacitor Fabrication
Doping Process
High-Frequency Transistor
Memory Device
Integrated Circuit
Crystalline Layers
Amorphous Layers
Semiconductor Component
Vertical Transistor
26 patents (USPTO):Explore Patents

Title: Herbert Schäfer: Innovator in Integrated Circuit Technology

Introduction

Herbert Schäfer is a notable inventor based in Höhenkirchen-Siegertsbrunn, Germany. He has made significant contributions to the field of integrated circuit technology, holding a total of 15 patents. His work focuses on innovative methods and arrangements that enhance the functionality and efficiency of electronic components.

Latest Patents

One of his latest patents is an "Integrated coolant circuit arrangement, operating method and production method." This invention provides an integrated circuit arrangement and a method for fabricating it. The design features at least one integrated electronic component arranged at a main area of a substrate, with main channels formed in the substrate. These channels are completely surrounded by the substrate, and transverse channels open into the main channels, enhancing the circuit's efficiency.

Another significant patent is for a "Process for the simultaneous deposition of crystalline and amorphous layers with doping." This method allows for the concurrent deposition of multiple crystalline structures on a semiconductor body using in-situ differential epitaxy. The process results in distinct crystalline regions, optimizing deposition characteristics through variable process parameters for each sub-layer.

Career Highlights

Herbert Schäfer has worked with prominent companies in the technology sector, including Infineon Technologies AG and Infineon Technologies Austria AG. His experience in these organizations has contributed to his expertise in integrated circuit design and semiconductor technology.

Collaborations

Throughout his career, Schäfer has collaborated with notable professionals in the field, including Thomas Meister and Reinhard J. Stengl. These collaborations have further enriched his work and innovations in integrated circuit technology.

Conclusion

Herbert Schäfer's contributions to integrated circuit technology through his patents and collaborations highlight his role as a significant innovator in the field. His work continues to influence advancements in electronic components and semiconductor processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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