The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Mar. 03, 2010
Josef Böck, München, DE;
Thomas Meister, Taufkirchen, DE;
Reinhard Stengl, Stadtbergen, DE;
Herbert Schäfer, Höhenkirchen-Siegertsbrunn, DE;
Josef Böck, München, DE;
Thomas Meister, Taufkirchen, DE;
Reinhard Stengl, Stadtbergen, DE;
Herbert Schäfer, Höhenkirchen-Siegertsbrunn, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A high-frequency bipolar transistor includes an emitter contact adjoining an emitter connection region, a base contact adjoining a base connection region, and a collector contact adjoining a collector connection region. A first insulation layer is disposed on the base connection region. The collector connection region contains a buried layer, which connects the collector contact to a collector zone. A silicide or salicide region is provided on the buried layer and connects the collector contact to the collector zone in a low-impedance manner. A second insulation layer is disposed on the collector connection region but not on the silicide region.