The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Apr. 21, 2008
Herbert Schäfer, Höhenkirchen-Siegertsbrunn, DE;
Martin Franosch, München, DE;
Thomas Meister, Taufkirchen, DE;
Josef Böck, München, DE;
Herbert Schäfer, Höhenkirchen-Siegertsbrunn, DE;
Martin Franosch, München, DE;
Thomas Meister, Taufkirchen, DE;
Josef Böck, München, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.