The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Jun. 15, 2001
Applicants:
Martin Franosch, München, DE;
Thomas Meister, Taufkirchen, DE;
Herbert Schäfer, Höhenkirchen-Siegertsb, DE;
Reinhard Stengl, Stadtbergen, DE;
Konrad Wolf, Zweibrücken, DE;
Inventors:
Martin Franosch, München, DE;
Thomas Meister, Taufkirchen, DE;
Herbert Schäfer, Höhenkirchen-Siegertsb, DE;
Reinhard Stengl, Stadtbergen, DE;
Konrad Wolf, Zweibrücken, DE;
Assignee:
Infineon Technologies AG, , DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
Abstract
The silicon bipolar transistor () comprises a base, with a first highly-doped base layer () and a second poorly-doped base layer () which together form the base. The emitter is completely highly-doped and mounted directly on the second base layer ().