The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Oct. 24, 2003
Josef Böck, München, DE;
Rudolf Lachner, Ingolstadt, DE;
Thomas Meister, Taufkirchen, DE;
Reinhard Stengl, Stadtbergen, DE;
Herbert Schäfer, Höhenkirchen-Siegertsbrunn, DE;
Martin Seck, München, DE;
Josef Böck, München, DE;
Rudolf Lachner, Ingolstadt, DE;
Thomas Meister, Taufkirchen, DE;
Reinhard Stengl, Stadtbergen, DE;
Herbert Schäfer, Höhenkirchen-Siegertsbrunn, DE;
Martin Seck, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.