The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Oct. 27, 2006
Thomas Meister, Taufkirchen, DE;
Herbert Schäfer, Höhenkirchen-Siegertsbrunn, DE;
Josef Böck, Munich, DE;
Rudolf Lachner, Ingolstadt, DE;
Thomas Meister, Taufkirchen, DE;
Herbert Schäfer, Höhenkirchen-Siegertsbrunn, DE;
Josef Böck, Munich, DE;
Rudolf Lachner, Ingolstadt, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating a semiconductor including defining a first component region and a second component region in a semiconductor body is provided. A first epitaxial layer is formed through the first component region. A second epitaxial layer is formed over the first epitaxial layer, including configuring the physical dimensions of a first active zone of the first component region independent of a second active zone of the second component region via the first epitaxial layer and the second epitaxial layer. In one embodiment, the first component is a radio-frequency transistor and the second component is a varactor.