The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Sep. 29, 2006
Michael Rüb, Faak am See, AT;
Herbert Schäfer, Hoehenkirchen-Siegertsbrunn, DE;
Armin Willmeroth, Augsburg, DE;
Anton Mauder, Kolbermoor, DE;
Stefan Sedlmaier, Munich, DE;
Roland Rupp, Lauf, DE;
Manfred Pippan, Noetsch, AT;
Hans Weber, Ainring, DE;
Frank Pfirsch, Munich, DE;
Franz Hirler, Munich, DE;
Hans-joachim Schulze, Ottobrunn, DE;
Michael Rüb, Faak am See, AT;
Herbert Schäfer, Hoehenkirchen-Siegertsbrunn, DE;
Armin Willmeroth, Augsburg, DE;
Anton Mauder, Kolbermoor, DE;
Stefan Sedlmaier, Munich, DE;
Roland Rupp, Lauf, DE;
Manfred Pippan, Noetsch, AT;
Hans Weber, Ainring, DE;
Frank Pfirsch, Munich, DE;
Franz Hirler, Munich, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.