The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2000
Filed:
Apr. 30, 1999
Herbert Schafer, Hohenkirchen-Sieg Brunn, DE;
Martin Franosch, Munchen, DE;
Reinhard Stengl, Stadtbergen, DE;
Gerrit Lange, Munchen, DE;
Hans Reisinger, Grunwald, DE;
Hermann Wendt, Grasbrunn, DE;
Volker Lehmann, Munchen, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A method for fabricating a capacitor for a semiconductor memory configuration. In this case, a selectively etchable material is applied to a conductive support, which is connected to a semiconductor body via a contact hole in an insulator layer, and patterned. A first conductive layer is applied thereon and patterned. A hole is introduced into the first conductive layer, through which hole the selectively etchable material is etched out. A cavity is produced under the first conductive layer in the process. The inner surface of the cavity and the outer surface of the first conductive layer are provided with a dielectric layer, to which a second conductive layer is applied and patterned.