The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Sep. 20, 1999
Hans Reisinger, Grünwald, DE;
Martin Franosch, München, DE;
Herbert Schäfer, Höhenkirchen-Sieg. Brunn, DE;
Reinhard Stengl, Stadtbergen, DE;
Volker Lehmann, München, DE;
Gerrit Lange, München, DE;
Hermann Wendt, Grasbrunn, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A memory cell configuration in a semiconductor substrate is proposed, in which the semiconductor substrate is of the first conductivity type. Trenches which run parallel to one another are incorporated in the semiconductor substrate, and first address lines run along the side walls of the trenches. Second address lines are formed on the semiconductor substrate, transversely with respect to the trenches. Semiconductor substrate regions, in which a diode and a dielectric whose conductivity can be changed are arranged, are located between the first address lines and the second address lines. A suitable current pulse can be used to produce a breakdown in the dielectric, with information thus being stored in the dielectric.