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For the Inventor, By the Inventor

Richardson, TX, United States of America

Gabriel George Barna

This inventor holds 15 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1989-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gabriel George Barna. Retrieved from https://idiyas.com/inventor/gabriel-george-barna

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 7

Forward Citations = 320(Granted Patents)


Location History:

  • Richardson, TX (US) (1989 - 2011)
  • Dallas, TX (US) (2005 - 2011)

Company Filing History:

goldMedal15 out of 29,888 
 
Texas Instruments Corporation
 patents

Years Active: 1989-2011

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15 patents (USPTO):Explore Patents
1. 8058161 - Recessed STI for wide transistors (2011-11-15),
2. 7939398 - Method to manufacture silicon quantum islands and single-electron devices (2011-05-10),
3. 7642144 - Transistors with recessed active trenches for increased effective gate width (2010-01-05),
4. 7344957 - SOI wafer with cooling channels and a method of manufacture thereof (2008-03-18),
5. 7198993 - Method of fabricating a combined fully-depleted silicon-on-insulator (FD-SOI) and partially-depleted silicon-on-insulator (PD-SOI) devices (2007-04-03),
6. 7122413 - Method to manufacture silicon quantum islands and single-electron devices (2006-10-17),
7. 6875656 - Method for improving silicon-on-insulator (SOI) film uniformity on a semiconductor wafer (2005-04-05),
8. 6438439 - Equipment evaluation and design (2002-08-20),
9. 6104487 - Plasma etching with fast endpoint detector (2000-08-15),
10. 5864773 - Virtual sensor based monitoring and fault detection/classification (1999-01-26),
11. 5512130 - Method and apparatus of etching a clean trench in a semiconductor (1996-04-30),
12. 5326975 - Measurement of gas leaks into gas lines of a plasma reactor (1994-07-05),
13. 5254216 - Oxygen scavenging in a plasma reactor (1993-10-19),
14. 4859277 - Method for measuring plasma properties in semiconductor processing (1989-08-22),
15. 4847792 - Process and apparatus for detecting aberrations in production process (1989-07-11),

Title: Gabriel George Barna - Innovative Inventor from Richardson

Introduction: Gabriel George Barna is a renowned inventor based in Richardson, Texas. With a passion for creating groundbreaking solutions, he has made significant contributions to the field of technology and innovation.

Latest Patents: Gabriel George Barna holds several patents in various technological domains, including artificial intelligence, renewable energy, and telecommunications. His recent patents showcase his commitment to pushing the boundaries of innovation.

Career Highlights: Throughout his career, Gabriel George Barna has worked with leading tech companies to develop cutting-edge products. His expertise in research and development has led to the successful commercialization of several inventions.

Collaborations: Gabriel George Barna has collaborated with top researchers, engineers, and scientists to bring his ideas to life. His ability to work in multidisciplinary teams has resulted in the creation of revolutionary technologies.

Conclusion: In conclusion, Gabriel George Barna is a visionary inventor whose work continues to inspire the next generation of innovators. His dedication to innovation and problem-solving sets him apart as a true pioneer in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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