The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Dec. 19, 2003
Christoph Wasshuber, Parker, TX (US);
Gabriel George Barna, Dallas, TX (US);
Olivier Alain Faynot, Seyssinet, FR;
Christoph Wasshuber, Parker, TX (US);
Gabriel George Barna, Dallas, TX (US);
Olivier Alain Faynot, Seyssinet, FR;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method of manufacturing a single-electron transistor device (). The method includes forming a thinned region () in a silicon substrate (), the thinned region () offset by a non-selected region (). The method also includes forming at least one quantum island () from the thinned region () by subjecting the thinned region () to an annealing process. The non-selected region () is aligned with the quantum island () and tunnel junctions () are formed between the quantum island () and the non-selected region (). The present invention also includes a single-electron device (), and a method of manufacturing an integrated circuit () that includes a single-electron device ().