The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 1996
Filed:
Mar. 09, 1994
Gabriel G Barna, Richardson, TX (US);
James G Frank, Garland, TX (US);
Richard P VanMeurs, Austin, TX (US);
Duane E Carter, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An etching apparatus (10) includes a process chamber (12) partially surrounded by an upper electrode (14) and a lower electrode (16). A semiconductor material (18) lies within the process chamber (12) and in contact with the lower electrode (16). The lower electrode (16) is connected to a first power supply (22) operating at a substantially high frequency and is also connected to a second power supply (24) operating at a relatively low frequency. The lower frequency of the second power supply (24) provides a degree of anisotropic control to the trench etching process performed on the semiconductor material (18). The added anisotropic control allows for the elimination of sidewall deposition enhancing materials within a plasma chemistry introduced into the process chamber (12) by a gas distributor (20). Without the requirement of a sidewall deposition enhancing material during trench etching of the semiconductor material (18), buildup of residue due to sidewall deposition does not occur within process chamber (12).