The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Jan. 19, 2005
Gabriel G. Barna, Richardson, TX (US);
Gabriel G. Barna, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method () of forming a silicon-on-insulator (SOI) wafer includes forming one or more channels in a top surface of a first wafer (), and forming an insulator layer on a second wafer (). The second wafer is treated () to generate a structural weakness therein, and the first and second wafers together () are then bonded together so that the channels face the insulator layer. A portion of the second wafer is then removed () from the bonded first and second wafers at a location corresponding to the structure weakness.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile