The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Dec. 13, 2004
Applicants:
Howard L. Tigelaar, Allen, TX (US);
Gabriel G. Barna, Richardson, TX (US);
Olivier Alain Faynot, Seyssinet, FR;
Inventors:
Howard L. Tigelaar, Allen, TX (US);
Gabriel G. Barna, Richardson, TX (US);
Olivier Alain Faynot, Seyssinet, FR;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method () of forming fully-depleted () and partially-depleted () silicon-on-insulator (SOI) devices on a single die in an integrated circuit device () is disclosed using SOI starting material () and a selective epitaxial growth process ().