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For the Inventor, By the Inventor

Kanagawa, Japan

Fumihiko Hayashi

This inventor holds 19 USPTO granted patents and 1 EPO patent. Top assignees: Nec Corporation, Renesas Electronics Corporation, Nec Electronics Corporation. Active years: 1994-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fumihiko Hayashi. Retrieved from https://idiyas.com/inventor/fumihiko-hayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19

% Patents Active = 78.9


Average Co-Inventor Count = 1.2

ph-index = 6

Forward Citations = 211(Granted Patents)


Location History:

  • Kanagawa, JP (2011 - 2012)
  • Tokyo, JP (1994 - 2023)

Company Filing History:

goldMedal12 out of 36,676 
 
Nec Corporation
 patents
silverMedal6 out of 7,651 
 
Renesas Electronics Corporation
 patents
bronzeMedal1 out of 2,467 
 
Nec Electronics Corporation
 patents

Years Active: 1994-2023

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19 patents (USPTO):Explore Patents
1. 11798886 - Semiconductor device and method of manufacturing the same (2023-10-24),
2. 11502036 - Semiconductor device and method of manufacturing the same (2022-11-15),
3. 8298900 - Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method (2012-10-30),
4. 8207572 - Nonvolatile semiconductor memory device (2012-06-26),
5. 7999306 - Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method (2011-08-16),
6. 7928491 - Semiconductor memory device having reference transistor and method of manufacturing the same (2011-04-19),
7. 6917071 - Semiconductor device, nonvolatile semiconductor storage apparatus using the device, and manufacture method of the device (2005-07-12),
8. 6849490 - Semiconductor device having a memory cell region and a peripheral circuit region and method of manufacturing thereof (2005-02-01),
9. 6268240 - Static semiconductor memory device capable of enhancing access speed (2001-07-31),
10. 6178110 - Static semiconductor memory device capable of enhancing access speed (2001-01-23),
11. 6093597 - SRAM having P-channel TFT as load element with less series-connected (2000-07-25),
12. 5973369 - SRAM having P-channel TFT as load element with less series-connected (1999-10-26),
13. 5965905 - Thin-film transistor and SRAM memory cell equipped therewith (1999-10-12),
14. 5940715 - Method for manufacturing semiconductor device (1999-08-17),
15. 5780909 - Semiconductor memory device with a two-layer top gate (1998-07-14),

Title: Fumihiko Hayashi - Innovative Inventor from Kanagawa

Introduction: Fumihiko Hayashi is a renowned inventor hailing from Kanagawa, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Fumihiko Hayashi holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Fumihiko Hayashi has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Fumihiko Hayashi has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Fumihiko Hayashi's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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