The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
Aug. 29, 1997
Fumihiko Hayashi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device manufacturing method capable of realizing a fine device isolation by stably suppressing the narrow channel effect and the reverse narrow channel effect in an N-channel MOS transistor. A patterned silicon nitride film 102 is formed, and after a P-type ion implanted layer 103 is formed, a field oxide film 105a is formed. In this process, re-distribution of the P-type impurity is caused by segregation, so that a P-type impurity concentration adjusting region 104a is formed at the surface of a P-type silicon substrate 101 in the proximity of a bird's beak of the field oxide film 105a.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile