The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Mar. 11, 1997
Fumihiko Hayashi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A memory cell for a semiconductor device includes two pairs of a transfer transistor and a drive transistor at a first level and a pair of load transistors above the two pairs of transfer and drive transistors at a second level. Each of the load transistors includes a gate, a source/drain, and a channel. The cell further includes a pair of contacts extending between the first and second levels and that connect one of the gates to a respective one of the two pairs of transfer and drive transistors. Each load transistor gate includes a portion that overlies its respective channel and a lateral extension therefrom that contacts a respective one of the contacts. The extension of one load transistor gate overlaps the source/drain of the other load transistor adjacent the respective one of the contacts.