The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
May. 25, 2001
Fumihiko Hayashi, Tokyo, JP;
Fumihiko Hayashi, Tokyo, JP;
NEC Electronics Corporation, Tokyo, JP;
Abstract
To provide a semiconductor storage apparatus and a manufacturing method thereof in which a memory cell source area is not silicided and a resistance dispersion caused by insufficient silicidation is therefore eliminated, and in which a silicide film is prevented from being formed in the step portion of a self-aligned source structure and therefore a resistance dispersion by a disconnected silicide film is not generated. In a semiconductor storage apparatus having a memory cell portion in which a source area is formed by a self-aligned process, a silicide blocking portion is disposed in a part of the surface of a source diffusion layer such that the resistance dispersion caused by the insufficient silicidation of the source diffusion layer is not generated.