The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Aug. 04, 1997
Fumihiko Hayashi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The present invention provides a semiconductor memory device including (a) a substrate, (b) a first MOS transistor acting as a driver, the first MOS transistor being formed on the substrate, (c) a second MOS transistor acting as a load, the second MOS transistor being formed on an insulative layer formed on the substrate, and (d) a gate electrode formed on a gate insulating film above a channel region of the second MOS transistor, the gate electrode comprising a semiconductor layer and a layer composed of metallic compound thereof. The present invention avoids significant reduction of breakdown voltage of a gate electrode in SRAM including a p-channel TFT as a load, even if a gate insulating film of a p-channel TFT is made thin.