The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Feb. 24, 2009
Applicant:
Fumihiko Hayashi, Kanagawa, JP;
Inventor:
Fumihiko Hayashi, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nonvolatile semiconductor storage device includes a semiconductor substrate, a charge storage layer formed above the semiconductor substrate, a control gate formed above the charge storage layer, a silicide layer formed above the control gate, a word gate formed above a side of the control gate. A top surface of the silicide layer is flat.